PÉREZ, MARTÍN; LADO, GERARDO M.; MATO, GERMÁN; FRANCO, DIEGO G.; VINCIGUERRA, IGNACIO ARTOLA; BERISSO, MARIANO GÓMEZ; POMIRO, FEDERICO J.; LIPOVETZKY, JOSÉ; MARPEGAN, LUCIANO

High-resolution X-Ray imaging of small animal samples based on Commercial-Off-The-Shelf CMOS image sensors

JOURNAL OF X-RAY SCIENCE AND TECHNOLOGY; Año: 2024 p. 1 - 13

DAMIAN LEONEL CORZI; JOSE LIPVOETZKY; FABRICIO PABLO ALCALDE BESSIA ET AL

Enhanced high-spatial resolution radiographic images based on COTS CMOS image sensors applied to wood dendrochronology and densitometry

RADIATION MEASUREMENTS; Año: 2024 vol. 172

GIMENEZ, MELISA LUCÍA; LIPOVETZKY, JOSÉ; ALCALDE BESSIA, FABRICIO; LONGHINO, JUAN MANUEL; TARTAGLIONE, AURELIANO; GARCIA-INZA, MARIANO ANDRÉS; BLOSTEIN, JUAN JERÓNIMO; CARBONETTO, SEBASTIÁN; GÓMEZ BERISSO, MARIANO; PÉREZ, MARTÍN; SIDELNIK, IVÁN; REDIN, EDUARDO GABRIEL; FAIGÓN, ADRIÁN

Neutron-gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer

MEDICAL PHYSICS; Año: 2022 vol. 49 p. 1276 - 1285

PÉREZ, M.; ABBATE, O.I.; LIPOVETZKY, J.; ALCALDE BESSIA, F.; SÁNCHEZ, F.A.; SOFO HARO, M.; LONGHINO, J.; GÓMEZ BERISSO, M.; BLOSTEIN, J.J.

Neutron imaging based on transfer foil activation and COTS CMOS image sensors

JOURNAL OF INSTRUMENTATION; Año: 2022 vol. 17

SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; REDIN, E.; FAIGÓN, A.

Numerical modeling of radiation-induced charge neutralization in MOS devices

RADIATION MEASUREMENTS; Año: 2022 vol. 153

CALARCO, NICOLÁS EZEQUIEL; LIPOVETZKY, JOSÉ; LUTENBERG, ARIEL; QUINTIÁN, FERNANDO PEREZ

Pattern matching oriented photodetector image sensor with programmable interconnection between pixels

OPTICAL ENGINEERING; Año: 2021 vol. 60

BESSIA, F. ALCALDE; LIPOVETZKY, J.; PERIC, I.

X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide

JOURNAL OF INSTRUMENTATION; Año: 2021 vol. 16

CARRÁ, MARTÍN J.; TACCA, HERNÁN; LIPOVETZKY, JOSÉ

Performance evaluation of gan and si based driver circuits for a sic mosfet power switch

International Journal of Power Electronics and Drive Systems; Año: 2021 vol. 12 p. 1293 - 1303

PÉREZ, M.; MARTÍNEZ, E.D.; LIPOVETZKY, J.; MARÍN, J.; SOFO HARO, M.; ALCALDE BESSIA, F.; GÓMEZ BERISSO, M.; BLOSTEIN, J.J.

High spatial resolution neutron detection technique based on Commercial Off-The-Shelf CMOS image sensors covered with NaGdF_4 nanoparticles

JOURNAL OF INSTRUMENTATION; Año: 2021 vol. 16

HARO, M. SOFO; CHAVEZ, C.; LIPOVETZKY, J.; BESSIA, F. ALCALDE; CANCELO, G.; CHIERCHIE, F.; ESTRADA, J.; MORONI, G. FERNANDEZ; STEFANAZZI, L.; TIFFENBERG, J.; UEMURA, S.

Analog pile-up circuit technique using a single capacitor for the readout of Skipper-CCD detectors

JOURNAL OF INSTRUMENTATION; Año: 2021 vol. 16

SIDELNIK, IVÁN; ASOREY, HERNÁN; GUARÍN, NICOLÁS; DURÁN, MAURICIO SUARÉZ; BERISSO, MARIANO GÓMEZ; LIPOVETZKY, JOSÉ; BLOSTEIN, JUAN JERÓNIMO

Simulation of 500 MeV neutrons by using NaCl doped Water Cherenkov detector

ADVANCES IN SPACE RESEARCH; Año: 2020 vol. 65 p. 2216 - 2222

CANATELLI, AXEL X.; PÉREZ, MARTÍN; LIPOVETZKY, JOSÉ; MARÍN, JULIO H.; ALBORNOZ, CECILIA A.; TARTAGLIONE, AURELIANO; RONCAROLI, FEDERICO

A Gadolinium Metal-Organic Framework Film as a Converter Layer for Neutron Detection

ChemPlusChem; Año: 2020 vol. 85 p. 2349 - 2356

SIDELNIK, IVÁN; ASOREY, HERNÁN; GUARÍN, NICOLÁS; DURÁN, MAURICIO SUARÉZ; BERISSO, MARIANO GÓMEZ; LIPOVETZKY, JOSÉ; BLOSTEIN, JUAN JERÓNIMO

Simulation of 500 MeV neutrons by using NaCl doped Water Cherenkov detector

ADVANCES IN SPACE RESEARCH; Año: 2020 vol. 65 p. 2216 - 2222

SIDELNIK, IVÁN; ASOREY, HERNÁN; GUARIN, NICOLÁS; SUARÉZ DURÁN, MAURICIO; LIPOVETZKY, JOSÉ; HORACIO ARNALDI, LUIS; PÉREZ, MARTÍN; SOFO HARO, MIGUEL; GÓMEZ BERISSO, MARIANO; ALCALDE BESSIA, FABRICIO; JERÓNIMO BLOSTEIN, JUAN

Enhancing neutron detection capabilities of a water Cherenkov detector

NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A - ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPAMENT; Año: 2020 vol. 955

SIDELNIK, IVÁN; ASOREY, HERNÁN; GUARIN, NICOLÁS; DURÁN, MAURICIO SUARÉZ; BESSIA, FABRICIO ALCALDE; ARNALDI, LUIS HORACIO; BERISSO, MARIANO GÓMEZ; LIPOVETZKY, JOSÉ; PÉREZ, MARTÍN; HARO, MIGUEL SOFO; BLOSTEIN, JUAN JERÓNIMO

Neutron detection capabilities of Water Cherenkov Detectors

NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A - ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPAMENT; Año: 2020

MIGUEL SOFO HARO; FABRICIO ALCALDE BESSIA; MARTı́N PÉREZ; JUAN JERÓNIMO BLOSTEIN; DARı́O FEDERICO BALMACEDA; MARIANO GOMEZ BERISSO; JOSÉ LIPOVETZKY

Soft X­rays spectroscopy with a commercial CMOS image sensor at room temperature

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Lugar: Amsterdam; Año: 2020

LIPOVETZKY, JOSÉ; CICUTTIN, ANDRÉS; CRESPO, MARÍA LIZ; SOFO HARO, MIGUEL; ALCALDE BESSIA, FABRICIO; PÉREZ, MARTÍN; GÓMEZ BERISSO, MARIANO

Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Lugar: Amsterdam; Año: 2020

BESSIA, FABRICIO ALCALDE; FLANDRE, DENIS; ANDRE, NICOLAS; IRAZOQUI, JULIETA; PEREZ, MARTIN; BERISSO, MARIANO GOMEZ; LIPOVETZKY, JOSE

Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2020 p. 1 - 1

CARBONETTO, S.; ECHARRI, M.; LIPOVETZKY, J.; GARCIANINZA, M.; FAIGON, A.

Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 µm CMOS process

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2020 p. 1 - 1

PÉREZ, MARTÍN; HARO, MIGUEL SOFO; LIPOVETZKY, JOSÉ; CICUTTIN, ANDRES; CRESPO, MARÍA LIZ; ALCADE BESSIA, FABRICIO; GÓMEZ BERISSO, MARIANO; BLOSTEIN, JUAN JERÓNIMO

Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Año: 2020 vol. 177

CALARCO, NICOLÁS; MOMBELLO, LUCAS; LIPOVETZKY, JOSÉ; LUTENBERG, ARIEL; PEREZ QUINTIÁN, FERNANDO

Self-aligning CMOS photodetector sensor for application on an NDB-based optical encoder

APPLIED OPTICS; Lugar: Washington; Año: 2019 vol. 58 p. 9172 - 9177

PÉREZ, MARTÍN; BLOSTEIN, JUAN JERÓNIMO; BESSIA, FABRICIO ALCALDE; TARTAGLIONE, AURELIANO; SIDELNIK, IVÁN; HARO, MIGUEL SOFO; SUÁREZ, SERGIO; GIMENEZ, MELISA LUCÍA; BERISSO, MARIANO GÓMEZ; LIPOVETZKY, JOSE

Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium

NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A - ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPAMENT; Año: 2018 vol. 893 p. 157 - 163

FABRICIO ALCALDE BESSIA; MARTIN PÉREZ; LIPOVETZKY, JOSE; NATALIA ALEJANDRA PIUNNO; HORACIO MATEOS; IVÁN SIDELNIK; JUAN JERÓNIMO BLOSTEIN; MIGUEL SOFO HARO; MARIANO GÓMEZ BERISSO, MARTÍN PÉREZ, FABRICIO PABLO ALCALDE BESSIA, IVÁN PEDRO SIDELNIK, MIGUEL SOFO HARO, JUAN JERÓNIMO BLOSTEIN, HERNÁN PASTORIZA

X-ray Micrographic Imaging System Based on COTS CMOS Sensors

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS; Lugar: LOndres; Año: 2018

BESSIA, FABRICIO ALCALDE; PEREZ, MARTIN; HARO, MIGUEL SOFO; SIDELNIK, IVAN; JERONIMO BLOSTEIN, J.; SUAREZ, SERGIO; PEREZ, PABLO; GOMEZ BERISSO, MARIANO; LIPOVETZKY, JOSE

Displacement Damage in CMOS Image Sensors after Thermal Neutron Irradiation

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2018 vol. 65 p. 2793 - 2801

GARCIA-INZA, MARIANO; CARBONETTO, SEBASTIAN H.; LIPOVETZKY, JOSE; FAIGON, ADRIAN

Radiation Sensor Based on MOSFETs Mismatch Amplification for Radiotherapy Applications

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2016 vol. 63 p. 1784 - 1789

MARTÍN PEREZ; JOSE LIPOVETZKY; MIGUEL SOFO HARO, IVAN SIDELNIK, JUAN JERONIMO BLOSTEIN, FABRICIO ALCALDE BESSIA, MARIANO GOMEZ BERISSO

Particle detection and classification using commercial off the shelf CMOS image sensors

NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A - ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPAMENT; Lugar: Amsterdam; Año: 2016 vol. 827 p. 171 - 180

SALOMONE, L. SAMBUCO; J. LIPOVETZKY; S.H. CARBONETTO; M.A. GARCÍA INZA; E.G. REDIN; F. CAMPABADAL; A. FAIGON

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

THIN SOLID FILMS; Lugar: Amsterdam; Año: 2016 vol. 600 p. 36 - 42

JULIANO BENFICA, BRUNO GREEN, LETÍCIA BOLZANI POEHLS, FABIAN VARGAS, NILBERTO H. MEDINA, NEMITALA ADDED, VITOR A. P. DE AGUIAR, EDUARDO L. A. MACCHIONE, ; FERNANDO AGUIRRE, MARCILEI A. G. SILVEIRA, MARTÍN PEREZ, MIGUEL SOFO HARO, IVAN SIDELNIK, JERÓNIMO BLOSTEIN, JOSÉ LIPOVETZKY, EDUARDO A. BEZERRA.; MARTÍN PEREZ, MIGUEL SOFO HARO, IVAN SIDELNIK, JERÓNIMO BLOSTEIN, JOSÉ LIPOVETZKY, EDUARDO A. BEZERRA.; JOSÉ LIPOVETZKY; EDUARDO A. BEZERRA

Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2016 vol. 64 p. 1294 - 1300

FERNANDO PEREZ QUINTIÁN; NICOLÁS CALARCO; ARIEL LUTENBERG; JOSÉ LIPOVETZKY

Performance of an optical encoder based on a nondiffractive beam implemented with a specific photodetection integrated circuit and a diffractive optical element

APPLIED OPTICS; Lugar: Washington; Año: 2015 vol. 54 p. 7640 - 7647

M. GARCIA-INZA; S. H. CARBONETTO; J. LIPOVETZKY; M. J. CARRA; L. SAMBUCO SALOMONE; E. G. REDIN; A. FAIGON

Switched Bias Differential MOSFET Dosimeter

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2014

FAIGÓN, A.; GARCÍA INZA, M.; LIPOVETZKY, J.; REDIN, E.; CARBONETTO, S.; SAMBUCO SALOMONE, L.; BERBEGLIA, F.

Experimental evidence and modeling of non-monotonic responses in MOS dosimeters

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Año: 2014 vol. 95 p. 44 - 46

L. SAMBUCO SALOMONE, A. KASULIN, J. LIPOVETZKY, S. H. CARBONETTO, M. A. GARCIA-INZA, E. G. REDIN, F. BERBEGLIA, F. CAMPABADAL AND A. FAIGÓN

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2014 p. 1 - 5

CARBONETTO, S.; GARCIA INZA, M.; LIPOVETZKY, J.; CARRA, M.J.; REDIN, E.; SALOMONE, L.S.; FAIGON, A

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2014

L. SAMBUCO SALOMONE; J. LIPOVETZKY; S. H. CARBONETTO, M. A. GARCÍA INZA, E. G. REDIN; CAMPABADAL, F; A. FAIGON

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2013 vol. 113 p. 74501 - 74508

J. LIPOVETZKY; M. A. GARCIA INZA; S. CARBONETTO; M. J. CARRA; E. REDIN; L. SAMBUCO SALOMON; A. FAIGON

Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2013 p. 4683 - 4691

BENFICA, J; BOLZANI POEHLS L.; VARGAS F.; LIPOVETZKY, J.; LUTENBERG, A; GARCIA S.; GATTI E.; HERNANDEZ F; CASSANS L.

Evaluating the Effects of Combined Total Ionizing Dose Radiation and Electromagnetic Interference

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2012 vol. 59 p. 1015 - 1019

LIPOVETZKY; HOLMES-SIEDLE A.; GARCIA INZA, M.; M.; CARBONETTO; CARBONETTO, S.; REDIN, E.; FAIGON A

New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2012 vol. 59 p. 3133 - 3140

JULIANO BENFICA; LETÍCIA MARIA BOLZANI POEHLS; FABIAN VARGAS; JOSÉ LIPOVETZKY; ARIEL LUTENBERG; EDMUNDO GATTI; FERNANDO HERNANDEZ

A Test Platform for Dependability Analysis of SoCs Exposed to EMI and Radiation

JOURNAL OF ELECTRONIC TESTING: THEORY AND APPLICATIONS; Lugar: Berlin; Año: 2012 p. 803 - 816

CARBONETTO, S.H.; GARCIA INZA, M.A.; LIPOVETZKY, J.; REDIN, E.G.; SALOMONE, L.S.; FAIGON, A.

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2011 vol. 6 p. 3348 - 3353

INZA, M.G.; LIPOVETZKY, J.; REDIN, E.G.; CARBONETTO, S.; FAIGON, A.;

Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2011 vol. 58 p. 808 - 812

JOSÉ LIPOVETZKY, EDUARDO GABRIEL REDIN, MARIANO ANDRÉS GARCÍA INZA, SEBASTIÁN CARBONETTO, AND ADRIÁN FAIGÓN

Reducing measurement uncertainties using bias cycled measurement in MOS dosimetry at different temperatures

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2010 vol. 57 p. 848 - 853

ADRIÁN FAIGÓN, JOSÉ LIPOVETZKY, E. REDIN, AND GONZALO KRUSCZENSKI

Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4636926&isnumber=4636880; Año: 2008 vol. 55 p. 2141 - 2147

JOSÉ LIPOVETZKY, EDUARDO GABRIEL REDIN, AND ADRIÁN FAIGÓN

Electrically Erasable Metal–Oxide–Semiconductor Dosimeters

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2007 vol. 54 p. 1244 - 1250