Switched Bias Differential MOSFET Dosimeter

M. GARCIA-INZA; S. H. CARBONETTO; J. LIPOVETZKY; M. J. CARRA; L. SAMBUCO SALOMONE; E. G. REDIN; A. FAIGON

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2014

0018-9499

This paper presents a differential MOSFET dosimeter that works under switched bias technique. The circuit was implemented and tested with 60 Co gamma radiation. Temperature rejection was assessed while the dosimeter was irradiated. The results show that in comparison with a single MOSFET dosimeter the thermal drift is 20 times smaller and the radiation sensitivity is 10% higher. The switched biasing allows to extend the measurement range beyond MOSFET?s threshold voltage saturation.