Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

J. LIPOVETZKY; M. A. GARCIA INZA; S. CARBONETTO; M. J. CARRA; E. REDIN; L. SAMBUCO SALOMON; A. FAIGON

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2013 p. 4683 - 4691

0018-9499

This paper presents a new technique to build MOS dosimeters using unmodified standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The devices were fabricated in two different commercial 0.6μm CMOS processes, gate oxide thicknesses of ∼600nm and ∼400nm. Responsivities up to 4.4 mV/rad with positive bias, and 1.7 mV/rad with zero gate bias were obtained in the thicker oxides. The effect of charge trapped in the oxide and interface states on the shift in the threshold voltage are analysed.