Electrically Erasable Metal–Oxide–Semiconductor Dosimeters

JOSÉ LIPOVETZKY, EDUARDO GABRIEL REDIN, AND ADRIÁN FAIGÓN

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Año: 2007 vol. 54 p. 1244 - 1250

0018-9499

Abstract—Metal–oxide–semiconductor (MOS) dosimetry including the reset of the sensor device for its reuse (reutilization) is described. The method consists in restoring the shifted threshold voltage after irradiation to a predefined value by the injection of a Fowler–Nordheim tunnel current. The amount of interface states per unit area is initially saturated in order to ensure repeatability. The method was tested on 70 nm pMOSFETs exposed to a 60Co source. After successive irradiations and erasures amounting several tens of kGy[SiO2], the devices exhibit a dispersion smaller than 2% in the responses.