INVESTIGADORES
SCHMIDT javier Alejandro
artículos
F. VENTOSINOS; A. MOEINI; DANIEL PÉREZ DEL REY; HENK J. BOLINK; J. A. SCHMIDT
Density of states within the bandgap of perovskite thin films studied using the moving grating technique
JOURNAL OF CHEMICAL PHYSICS; Año: 2022 vol. 156 p. 114201 - 114209
KOPPRIO, L.; LONGEAUD, C.; VENTOSINOS, F.; SCHMIDT, J. A.
Further insight into the oscillating photocarrier grating technique: influence of the oscillation amplitude
APPLIED PHYSICS B - LASERS AND OPTICS; Lugar: Berlin; Año: 2021 vol. 127 p. 1 - 11
JAVIER SCHMIDT; DAVID GOLDIE
Photocurrent decay from the steady-state in thin film hydrogenated amorphous silicon: Numerical simulation analysis of experimental results
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2020 vol. 696 p. 1377931 - 1377937
HIERREZUELO-CARDET, PEDRO; PALECHOR-OCAMPO, ANDERZON F.; CARAM, JORGE; VENTOSINOS, FEDERICO; PÉREZ-DEL-REY, DANIEL; BOLINK, HENK J.; SCHMIDT, JAVIER A.
External quantum efficiency measurements used to study the stability of differently deposited perovskite solar cells
JOURNAL OF APPLIED PHYSICS; Año: 2020 vol. 127 p. 2355011 - 2355019
VENTOSINOS, F.; KOFFMAN-FRISCHKNECHT, A.; HERRERA, W.; SENNO, M.; CARAM, J.; PEREZ, M.D.; SCHMIDT, J.A.
Estimation of carrier mobilities and recombination lifetime in halide perovskites films using the moving grating technique
JOURNAL OF PHYSICS - D (APPLIED PHYSICS); Año: 2020 vol. 53 p. 4151071 - 41510710
KOPPRIO, LEONARDO; LONGEAUD, CHRISTOPHE; SCHMIDT, JAVIER
Hydrogenated amorphous silicon characterization from steady state photoconductive measurements
SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Lugar: Londres; Año: 2019 vol. 34 p. 450101 - 4501014
KOPPRIO, LEONARDO; VENTOSINOS, FEDERICO; SCHMIDT, JAVIER
The chopped moving photocarrier grating technique
REVIEW OF SCIENTIFIC INSTRUMENTS; Año: 2019 vol. 90 p. 1239021 - 1239029
RUBINELLI, FRANCISCO A.; RAMIREZ, HELENA; RUIZ, CARLOS M.; SCHMIDT, JAVIER A.
Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
JOURNAL OF APPLIED PHYSICS; Año: 2017 vol. 121 p. 1845021 - 18450214
KOPPRIO, L.; LONGEAUD, C.; SCHMIDT, J. A.
Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
JOURNAL OF APPLIED PHYSICS; Año: 2017 vol. 122 p. 857021 - 8570210
C. LONGEAUD; A. FATH ALLAH; J.A. SCHMIDT; M. EL YAAKOUBI; S. BERSON; N. LEMAITRE
Determination of diffusion lengths in organic semiconductors: Correlation with solar cell performances
ORGANIC ELECTRONICS; Lugar: Amsterdam; Año: 2016 vol. 31 p. 253 - 257
GARCÉS, F.; BUDINI, N.; SCHMIDT, J. A.; ARCE, R. D.
Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2016 vol. 605 p. 149 - 156
BENVENUTO, A. G.; BUITRAGO, R. H.; SCHMIDT, J. A.
Doped polycrystalline silicon thin films deposited on glass from trichlorosilane
CHEMICAL VAPOR DEPOSITION; Lugar: Weinheim; Año: 2015 vol. 21 p. 54 - 62
GARCÉS, F.; BUDINI, N.; ARCE, R. D.; SCHMIDT, J. A.
Effect of thickness on structural and electrical properties of Al-doped ZnO films
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2015 vol. 574 p. 162 - 168
A. DUSSAN CUENCA; J. A. SCHMIDT; R. R. KOROPECKI
Density of states in thin boron-doped microcrystalline silicon films estimated from the thermally stimulated conductivity method
ACTA PHYSICA POLONICA A; Lugar: Varsovia; Año: 2014 vol. 125 p. 174 - 176
C. LONGEAUD; J. SCHMIDT
a-Si:H transport parameters from experiments based on photoconductivity
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2012 vol. 358 p. 2052 - 2056
LONGEAUD, C.; VENTOSINOS, F.; SCHMIDT, J. A.
Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2012 vol. 112 p. 237091 - 2370910
N. BUDINI; P. RINALDI; R. D. ARCE; J. A. SCHMIDT; R. R. KOROPECKI; R. H. BUITRAGO
Vacuum-enhanced nickel-induced crystallization of hydrogenated amorphous silicon
JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2012 vol. 112 p. 735061 - 735067
BENVENUTO, A. G.; BUITRAGO, R. H.; BHADURI, A.; LONGEAUD, C.; SCHMIDT, J. A.
Characterization of thin polycrystalline silicon films deposited on glass by CVD
SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Lugar: Londres; Año: 2012 vol. 27 p. 1250131 - 1250135
BENVENUTO, A. G.; BUITRAGO, R. H.; SCHMIDT, J. A.
Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS; Lugar: Paris; Año: 2012 vol. 58 p. 201011 - 201017
VENTOSINOS, F.; LONGEAUD, C.; SCHMIDT, J.A.
Density of states evaluations from oscillating/moving grating techniques
JOURNAL OF NON-CRYSTALLINE SOLIDS; Año: 2012 vol. 358 p. 2031 - 2034
VENTOSINOS, F.; BUDINI, N.; LONGEAUD, C.; SCHMIDT, J. A.
Analysis of the oscillating photocarrier grating technique
JOURNAL OF PHYSICS - D (APPLIED PHYSICS); Lugar: Londres; Año: 2011 vol. 44 p. 2951031 - 29510312
SCHMIDT, J. A.; BUDINI, N.; VENTOSINOS, F.; LONGEAUD, C.
Theoretical analysis and experimental results on the modulated photocarrier grating technique
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH; Lugar: Weinheim; Año: 2010 vol. 207 p. 556 - 560
SCHMIDT, J. A.; BUDINI, N.; ARCE, R. D.; BUITRAGO, R. H.
Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS; Lugar: Weinheim; Año: 2010 vol. 7 p. 600 - 603
BUDINI, N.; RINALDI, P.; SCHMIDT, J. A.; ARCE, R. D.; BUITRAGO, R. H.
Influence of microstructure and hydrogen concentration on amorphous silicon crystallization
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2010 vol. 518 p. 5349 - 5354
J. A. SCHMIDT; N. BUDINI; P. RINALDI; R. D. ARCE; R. H. BUITRAGO
Nickel-induced crystallization of amorphous silicon
JOURNAL OF PHYSICS: CONFERENCE SERIES; Lugar: Bristol; Año: 2009 vol. 167 p. 120461 - 120465
L. N. ACQUAROLI; A. BRONDINO; J. A. SCHMIDT; R. D. ARCE; R. R. KOROPECKI
Infrared study of the oxidation of porous silicon: evidence of surface modes
PHYSICA STATUS SOLIDI C; Lugar: Weinheim; Año: 2009 vol. 6 p. 1546 - 1550
A. DUSSAN CUENCA; J. A. SCHMIDT
Fracción de Volumen Cristalina en Muestras de µc-Si Dopadas con Boro Obtenida Mediante Espectroscopia Raman
REVISTA COLOMBIANA DE FÍSICA; Lugar: Santiago de Cali; Año: 2009 vol. 41 p. 82 - 84
C. LONGEAUD; J. A. SCHMIDT; R. R. KOROPECKI; J. P. KLEIDER
Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS; Lugar: Bucarest; Año: 2009 vol. 11 p. 1064 - 1071
URTEAGA, R; MARÍN, O.; ACQUAROLI, L. N.; COMEDI, D.; SCHMIDT, J. A.; KOROPECKI, R. R.
Enhanced photoconductivity and fine response tuning in nanostructured porous silicon microcavities
JOURNAL OF PHYSICS: CONFERENCE SERIES; Lugar: Bristol; Año: 2009 vol. 167 p. 120051 - 120055
R. H. BUITRAGO; G. A. RISSO; M. CUTRERA; M. BATTIONI; L. DE BERNARDEZ; J. A. SCHMIDT; R. D. ARCE; R. R. KOROPECKI
Polycrystalline silicon thin film solar cells prepared by PECVD-SPC
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY; Lugar: Amsterdam; Año: 2008 vol. 33 p. 3522 - 3525
J. A. SCHMIDT; C. LONGEAUD; R. R. KOROPECKI; R. D. ARCE; J. P. KLEIDER
Modulated photoconductivity in the high and low frequency regimes
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2008 vol. 354 p. 2914 - 2917
J. A. SCHMIDT; N. BUDINI; P. RINALDI; R. D. ARCE; R. H. BUITRAGO
Large-grained oriented polycrystalline silicon thin films prepared by nickel-silicide-induced crystallization
JOURNAL OF CRYSTAL GROWTH; Lugar: Amsterdam; Año: 2008 vol. 311 p. 54 - 58
J. A. SCHMIDT; C. LONGEAUD; R. R. KOROPECKI; R. ARCE
Low frequency modulated photoconductivity in semiconductors having multiple species of traps
JOURNAL OF APPLIED PHYSICS; Lugar: Melville; Año: 2007 vol. 101 p. 10370501 - 10370510
A. DUSSAN; R. ARCE; J. A. SCHMIDT; R. R. KOROPECKI
Caracterización óptica y eléctrica de películas delgadas semiconductoras de silicio microcristalino dopadas con boro
REVISTA COLOMBIANA DE FÍSICA; Lugar: Santiago de Cali; Año: 2007 vol. 39 p. 99 - 102
A. DUSSAN; R. R. KOROPECKI; R.D. ARCE; J. A. SCHMIDT
Structural and optical properties of compensated microcrystalline silicon films
REVISTA MEXICANA DE FíSICA; Lugar: México; Año: 2007 vol. S53 p. 253 - 255
R. R. KOROPECKI; R. ARCE; C. SPIES; A. M. GENNARO; J. A. SCHMIDT
Role of hydrogen in the photoinduced evolution of porous silicon luminescence
PHYSICA STATUS SOLIDI (C); Lugar: Weinheim; Año: 2007 vol. 4 p. 2150 - 2154
C. LONGEAUD; J. A. SCHMIDT; R. R. KOROPECKI
Determination of semiconductor band gap state parameters from photoconductivity measurements: II- Experimental results
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Lugar: Ridge; Año: 2006 vol. 73 p. 23531701 - 23531710
C. LONGEAUD; J. A. SCHMIDT; J. P. KLEIDER
Determination of semiconductor band gap state parameters from photoconductivity measurements. I. Theoretical developments
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Lugar: Ridge; Año: 2006 vol. 73 p. 23531601 - 23561620
J.A. SCHMIDT; C. LONGEAUD; R.R. KOROPECKI; J.P. KLEIDER
Determination of the density of states of semiconductors from steady-state photoconductivity measureme
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2006 vol. 352 p. 1024 - 1027
R.R. KOROPECKI; R.D. ARCE; A.M. GENNARO; C. SPIES; J.A. SCHMIDT
Kinetics of the photoinduced evolution of the nanostructured porous silicon photoluminescence
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2006 vol. 352 p. 1163 - 1166
R. D. ARCE; R. R. KOROPECKI; G. OLMOS; A. M. GENNARO; J. A. SCHMIDT
Photoinduced phenomena in nanostructured porous silicon
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2006 vol. 510 p. 169 - 174
J. A. SCHMIDT; C. LONGEAUD
Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Lugar: Ridge; Año: 2005 vol. 71 p. 1252081 - 12520813
J. A. SCHMIDT; C. LONGEAUD; J. P. KLEIDER
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2005 vol. 493 p. 319 - 324
R. R. KOROPECKI; R. ARCE; J. A. SCHMIDT
Photo-oxidation effects in porous silicon luminescence
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Lugar: Ridge; Año: 2004 vol. 69 p. 20531 - 20532
A. DUSSAN CUENCA; R. R. KOROPECKI; R. ARCE; J. A. SCHMIDT; R. H. BUITRAGO
Post-growth annealing effects in compensated mc-Si:H samples
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2004 vol. 338- p. 430 - 433
A. DUSSAN CUENCA; J. A. SCHMIDT; R. ARCE; R. H. BUITRAGO; R. R. KOROPECKI
On the validity of defect density determinations by the recombination-regime modulated photoconductivity technique
THIN SOLID FILMS; Lugar: Amsterdam; Año: 2004 vol. 449 p. 180 - 186
J. A. SCHMIDT; R. R. KOROPECKI; R. ARCE; A. DUSSAN CUENCA; R. H. BUITRAGO
Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2004 vol. 338- p. 322 - 325
R. R. KOROPECKI; R. D. ARCE; J. A. SCHMIDT
Infrared studies combined with hydrogen effusion experiments on nanostructured porous silicon.
JOURNAL OF NON-CRYSTALLINE SOLIDS; Lugar: Amsterdam; Año: 2004 vol. 338 p. 159 - 162
J. A. SCHMIDT; C. LONGEAUD
Density of states determination from steady-state photocarrier grating measurements
APPLIED PHYSICS LETTERS; Lugar: Melville; Año: 2004 vol. 85 p. 4412 - 4414
KOROPECKI, R.R.; SCHMIDT, J.A.; ARCE, R.
Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime
JOURNAL OF APPLIED PHYSICS; Año: 2002 vol. 91 p. 8965 - 8969
SCHMIDT, J. A.; HUNDHAUSEN, M.; LEY, L.
Analysis of the moving photocarrier grating technique for semiconductors of high defect density
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS; Año: 2001 vol. 64
SCHMIDT, J. A.; HUNDHAUSEN, M.; LEY, L.
Transport properties of a-SiC :H films investigated by the moving photocarrier grating technique
PHYSICAL REVIEW B; Lugar: Ridge; Año: 2000 vol. 62 p. 13010 - 13015
SCHMIDT, J.A.; KOROPECKI, R.R.; ARCE, R.D.; RUBINELLI, F.A.; BUITRAGO, R.H.
Energy-resolved photon flux dependence of the steady state photoconductivity in hydrogenated amorphous silicon: Implications for the constant photocurrent method
THIN SOLID FILMS; Año: 2000 vol. 376 p. 267 - 274
SCHMIDT, J.A; HUNDHAUSEN, M; LEY, L
Transport properties of amorphous hydrogenated silicon–carbon alloys
JOURNAL OF NON-CRYSTALLINE SOLIDS; Año: 2000 vol. 266 p. 694 - 698
SCHMIDT, J.A.; ARCE, R.D.; KOROPECKI, R.R.; BUITRAGO, R.H.
Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements
PHYSICAL REVIEW B; Año: 1999 vol. 59 p. 4568 - 4571
SCHMIDT, J.A.; RUBINELLI, F.A.
Limitations of the constant photocurrent method: A comprehensive experimental and modeling study
JOURNAL OF APPLIED PHYSICS; Año: 1998 vol. 83 p. 339 - 348
SCHMIDT, J.; ARCE, R.; BUITRAGO, R.; KOROPECKI, R.
Light-induced defects in hydrogenated amorphous silicon studied by the constant-photocurrent method
PHYSICAL REVIEW B; Año: 1997 vol. 55 p. 9621 - 9627
SCHMIDT, J.A.; CUTRERA, M.; BUITRAGO, R.H.; ARCE, R.D.
Influence of the light-induced degradation on the extended state mobility in hydrogenated amorphous silicon
APPLIED PHYSICS LETTERS; Año: 1996 vol. 69 p. 4047 - 4049
SCHMIDT, J.A.; KOROPECKI, R.R.; ARCE, R.; BUITRAGO, R.H.
Annealing-induced effects on the stability of hydrogenated amorphous silicon
JOURNAL OF APPLIED PHYSICS; Año: 1995 vol. 78 p. 5959 - 5964