Transport properties of amorphous hydrogenated silicon–carbon alloys

SCHMIDT, J.A; HUNDHAUSEN, M; LEY, L

JOURNAL OF NON-CRYSTALLINE SOLIDS

ELSEVIER SCIENCE BV

Año: 2000 vol. 266 p. 694 - 698

0022-3093

We measure the electron and hole drift mobility and the recombination lifetime in hydrogenated amorphous silicon?carbon alloys by using the moving photocarrier grating (MPG) technique. Samples have been prepared by plasma enhanced chemical vapor deposition of methane/silane mixtures under 90% hydrogen dilution. The optical gap of the samples varies between 1.72 and 2.09 eV. We find a decrease in the electron drift mobility when small amounts of carbon (leading to optical gaps