INVESTIGADORES
SCHMIDT javier Alejandro
artículos
Título:
Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime
Autor/es:
KOROPECKI, R.R.; SCHMIDT, J.A.; ARCE, R.
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Año: 2002 vol. 91 p. 8965 - 8969
ISSN:
0021-8979
Resumen:
An experimental technique to study the energy profile of localized states in the gap of amorphous semiconductors is proposed. The method is based on the relationship between the recombination lifetime and the density of states (DOS) at the quasi-Fermi level for trapped carriers. We use the modulated photocurrent experiment in the recombination-limited regime as a convenient method to measure the recombination lifetime. Measurements performed as a function of temperature allow the DOS above the Fermi energy to be determined. The accuracy and limitations of the method are studied by means of computer simulations. The experimental technique is applied to obtain the density of defect states of a hydrogenated amorphous silicon sample. © 2002 American Institute of Physics.
