GOYRET, JUAN P.; CASSANI, MARÍA V.; CARBONETTO, SEBASTIÁN H.; GARCIA-INZA, MARIANO A.

Low-power temperature-independent CMOS measurement circuits for resistive gas sensors

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS; Año: 2023 p. 1 - 16

GIMENEZ, MELISA LUCÍA; LIPOVETZKY, JOSÉ; ALCALDE BESSIA, FABRICIO; LONGHINO, JUAN MANUEL; TARTAGLIONE, AURELIANO; GARCIA-INZA, MARIANO ANDRÉS; BLOSTEIN, JUAN JERÓNIMO; CARBONETTO, SEBASTIÁN; GÓMEZ BERISSO, MARIANO; PÉREZ, MARTÍN; SIDELNIK, IVÁN; REDIN, EDUARDO GABRIEL; FAIGÓN, ADRIÁN

Neutron-gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer

MEDICAL PHYSICS; Año: 2022 vol. 49 p. 1276 - 1285

SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; REDIN, E.; FAIGÓN, A.

Numerical modeling of radiation-induced charge neutralization in MOS devices

RADIATION MEASUREMENTS; Año: 2022 vol. 153

SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; REDIN, E.; FAIGON, A.

Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2022 vol. 69 p. 1229 - 1235

SAMBUCO SALOMONE, L.; MARIANO ANDRÉS GARCÍA INZA; CARBONETTO, S.H.; A. FAIGÓN

Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

Revista elektron; Año: 2021 vol. 5 p. 100 - 104

SANCA, G.A.; GARCIA-INZA, M.; GOLMAR, F.

Multibit-RRAM readout circuits based on non-balanced inverters

MICROELECTRONICS JOURNAL; Año: 2021 vol. 108

CASSANI, M.V.; SAMBUCO SALOMONE, L.; CARBONETTO, S.; FAIGÓN, A.; REDIN, E.; GARCIA-INZA, M.

Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Año: 2021 vol. 182

CARBONETTO, S.; ECHARRI, M.; LIPOVETZKY, J.; GARCIANINZA, M.; FAIGON, A.

Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 µm CMOS process

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2020 p. 1 - 1

BARELLA, M.; SANCA, G.; MARLASCA, F. GOMEZ; ACEVEDO, W. ROMÁN; RUBI, D.; GARCIA-INZA, M.; LEVY, P.; GOLMAR, F.

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Año: 2019 vol. 154 p. 85 - 90

GARCIA-INZA, M.; CASSANI, M.; CARBONETTO, S.; CASAL, M.; REDÍN, E.; FAIGÓN, A.

6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process

RADIATION MEASUREMENTS; Año: 2018 vol. 117 p. 63 - 69

N. RONIS; GARCIA-INZA, M.

Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5 um CMOS Process

Revista elektron; Lugar: CABA; Año: 2017 vol. 1 p. 1 - 7

SALOMONE, L. SAMBUCO; LIPOVETZKY, J.; CARBONETTO, S.H.; GARCÍA INZA, M.A.; REDIN, E.G.; CAMPABADAL, F.; FAIGÓN, A.

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

THIN SOLID FILMS; Año: 2016 vol. 600 p. 36 - 42

M. GARCIA INZA; S. CARBONETTO; J. LIPOVETZKY; A. FAIGÓN

Radiation Sensor Based on MOSFETs Mismatch Amplification for Radiotherapy Applications

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2016 vol. 63 p. 1784 - 1789

M. GARCIA INZA; S. CARBONETTO; J. LIPOVETZKY; M. CARRA; L. SAMBUCO SALOMONE; E. REDIN; A. FAIGON

Switched Bias Differential MOSFET Dosimeter

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2014 vol. 61 p. 1407 - 1413

S. H. CARBONETTO; M. GARCIA INZA; J. LIPOVETZKY; M. CARRÁ; E. REDÍN; L. SAMBUCO SALOMONE; A. FAIGÓN

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2014 vol. 61 p. 3466 - 3471

FAIGÓN, A.; GARCIA-INZA, M.; LIPOVETZKY, J.; REDIN, E.; CARBONETTO, S.; SAMBUCO SALOMONE, L.; BERBEGLIA, F.

Experimental evidence and modeling of non-monotonic responses in MOS dosimeters

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Año: 2014 vol. 95 p. 44 - 46

L. SAMBUCO SALOMONE; J. LIPOVETZKY; S. CARBONETTO; M. A. GARCÍA INZA; E. REDÍN; F. CAMPABADAL; A. FAIGÓN

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2013 p. 745011 - 745017

J. LIPOVETZKY; M. GARCIA INZA; S. CARBONETTO; M. CARRÁ; E. REDÍN; L. SAMBUCO SALOMONE; A. FAIGÓN

Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2013

J. LIPOVETZKY; A. HOLMES-SIEDLE; M. GARCIA INZA; S. CARBONETTO; E. REDÍN; A. FAIGÓN

New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2012 p. 3133 - 3140

M. GARCÍA INZA; J. LIPOVETZKY; E. REDÍN; S. CARBONETTO; A. FAIGÓN

Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2011 p. 808 - 812

S. CARBONETTO; M. GARCÍA INZA; J. LIPOVETZKY; E. REDÍN; L. SAMBUCO SALOMONE; A. FAIGÓN

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry.

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2011 p. 3348 - 3353

J. LIPOVETZKY; E. REDIN; M. GARCÍA INZA; S. CARBONETTO; A. FAIGÓN

Reducing measurement uncertainties using bias cycled measurement in MOS dosimetry at different temperatures

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2010 vol. 57 p. 848 - 853