Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 µm CMOS process

CARBONETTO, S.; ECHARRI, M.; LIPOVETZKY, J.; GARCIANINZA, M.; FAIGON, A.

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Año: 2020 p. 1 - 1

0018-9499

This paper presents the design, fabrication and characterization of an integrated differential dosimeter based on the mismatch of two identical FOXFETs. This dosimeter was fabricated in a high-voltage 0.35 µm CMOS process, where the FOXFET and the biasing circuit were integrated in the same chip. The FOXFET as a single device and the whole circuit as an integrated differential sensor were characterized regarding its response to both radiation and temperature. The differential sensor showed low temperature sensitivity, 320 times lower than the single FOXFET temperature sensitivity, while it also showed a reduction in radiation sensitivity only in a factor of 1.6. These results drastically improved the temperature error factor, calculated to 23mrad/°C. Moreover, the Bias Controlled Cycled Measurement technique was successfully implemented improving dose range up to 9.4 krad. Finally, the temperature rejection performance was assessed in real-time measurements during exposure to radiation, and sensitivity of the dosimeter showed no change with temperature.