INVESTIGADORES
ARCE roberto Delio
artículos
Título:
The Role of Surface in Sputtered Amorphous Silicon. An Oxidation Study
Autor/es:
CUTRERA, M.; GENNARO, A. M.; BATTIONI, M.; KOROPECKI, R. R.; DE BERNARDEZ, L; ARCE, R. D.; BUITRAGO, R.H.
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Año: 1985 vol. 58 p. 4251 - 4255
ISSN:
0021-8979
Resumen:
High porosity amorphous silicon samples were produced by dc‐sputtering in high argon pressure. Post‐deposition oxidation and correlated effects were studied in order to elucidate the surface contribution to the measured properties. Infrared spectroscopy, used to follow the oxygen concentration during the oxidation process, allows us to detect the way in which the oxygen is attached. The electron spin density, absorption edge, and dark conductivity are measured in correlation with the oxygen content. We conclude that, for this material, dangling bonds are preferentially located near the inner surface of the porous structure. It is suggested that band bending is responsible for conductivity enhancement and two alternative mechanisms are proposed to explain the absorption edge shift.
