Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement

F. A. BESSIA, D. FLANDRE, N. ANDRÉ, J. IRAZOQUI, M. PÉREZ, M. G. BERISSO, J. LIPOVETZKY

Sidney

Simposio; 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC); 2018

IEEE

Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.