Application of a CMOS differential and amplified dosimeter with Field Oxide n?channel MOSFETs to Diagnosis X?Ray beams.

S. CARBONETTO, M. GARCIAINZA,; J. LIPOVETZKY; M.J. CARRA, E. REDIN, L. SAMBUCO SALOMONE, A. FAIGON

Conferencia; 2014 Argentine School of Micro-Nanoelectronics, Technology and Applications; 2014

?We present in this paper a new circuit embeddedsensor for ionizing radiation based on MOSFET dosimeters. Thecircuit presents differential sensing and inherent amplification,making it much more sensitive than standard MOS dosimeters.An n?channel Field Oxide transistor pair is used as the sensitivemodule of the circuit. The circuit was tested against γ?radiationand showed a non?linear responsivity and a maximum 58×amplification, corresponding to a sensitivity of 25.6 V/Gy. Thenthe circuit was tested against X?Ray beams and the responsewas corrected using the previous characterization, showing tobe linear with the beam charge and dependent with the energyof the beam. These results indicate that the proposed circuit issuitable for X?Ray dosimetry.