Study of Floating Gate MOS devices transients during switched bias irradiations,

GACIA LNZA, M.; LIPOVETZKY, J.; REDIN, E.; CARBONETTO, S.; SALOMONE, L.S.; KASULIN, A.; FAIGÓN, A.;

Montevideo

Conferencia; Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2010; 2010

Universidad de la República / Unviersdiad Católica

Switching bias dependent transients were observed in Floating Gate Metal Oxide Semiconductor (FGMOS) devices during irradiations when applying the Bias Controlled Cycled Measurement (BCCM) novel technique. The study of these transients gives information about the radiation generated charge distribution in FGMOS structures. Energy band diagrams are used to explain these transients and to show how VT evolution depends on the bias and the charge distribution between the traps close to the Si-SiO2 interface and the FG while the device is irradiated.