INVESTIGADORES
LIPOVETZKY Jose
congresos y reuniones científicas
Título:
Charge trapping/detrapping in HfO2-based MOS devices
Autor/es:
-SALOMONE, L. SAMBUCO; CARBONETTO, S. H.; INZA, M. A. GARCIA; LIPOVETZKY, J.; REDIN, E. G.; CAMPABADAL, F.; FAIGON, A.;
Lugar:
Buenos Aires
Reunión:
Conferencia; Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2011; 2011
Institución organizadora:
FIUBA
Resumen:
The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters.
