Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors

SALOMONE, L.S.; CAMPABADAL, F.; FERNANDEZ, M.I.; LIPOVETZKY, J.; CARBONETTO, S.H.; INZA, M.A.G.; REDIN, E.G.; FAIGON, A.

Córdoba

Conferencia; Micro-Nanoelectronics, Technology and Applications (EAMTA), 2012 Argentine School of; 2012

UNC/IEEE

In a previous paper presented at EAMTA 2011 our group introduced the design of a customized CMOS active pixel sensor (APS) for a non-diffractive beam optical encoder implemented in a standard 0.5 μm channel length CMOS process. In this work we bring up a new version of the chip endowed with a programmable gain system that allows weighting the light collected by each pixel by a programmable factor between 0 and 127. By means of experimental measurements the performance of the chip is studied for light intensities varying over three decades and gain factors varying between 0 and 127.