Memory effect on eutectic In8Sb8Te84

BARBON CLAUDIO; BILOVOL V; ARCONDO B.

San Carlos de Bariloche

Simposio; XXIII Latin American Symposium on Solid State Physics; 2018

Centro Atómico Bariloche

In-Sb-Te system is one of the possible candidates for novel data storage and processing technologies. The main feature of such technologies is to be able to save the data without consuming of energy (non-volatile memories) and, additionally, to have innumerable access to these data. It is expected that the foundation of the non-volatile memories lies in the change of electrical resistance and no longer in the storage of charge. While the main efforts of scientific and engineering community are traditionally directed to the search of a suitable compound, we alternatively explore an eutectic ternary composition whose advantage is that crystallization as well as amorphization occurs simultaneously for the present multiphases. In this connection, we previously studied thermal characteristics of In8Sb8Te84 eutectic thin films (prepared by pulsed laser deposition) as well as the dependence of their sheet resistivity on temperature. The revealed characteristics resulted highly attractive: the crystallization temperature was about 140oC and the resistivity jump about 104 times. Hereby, we continue studying the eutectic film by carrying out V-I measurements in transversal mode with home-made electronic circuit, in accordance with suggested in [2]. The measurements were made in a voltage-controlled mode using a voltage generator. The results demonstrated that the system under research evidenced a memory effect. The main characteristics as Voltage threshold and Voltage hold (1-3 V) are compatible with the ones revealed by the well known Ge2Sb2Te5 compound.