Initial growth stages of AlF3 on Cu(100): an STM study

J. C. MORENO-LÓPEZ; M. C. G. PASSEGGI(JR); G. RUANO; R. A. VIDAL; J. FERRÓN

physica status solidi c

WILEY-VCH

Lugar: Berlín; Año: 2010 vol. 7 p. 2712 - 2715

1610-1642

In this study we present results concerning the early growth stages of an insulator-metal interface by means of scanning tunnelling microscopy. In particular, we report the growth of aluminium fluoride (AlF3) islands over a Cu(100) surface at room temperature, from sub-monolayer coverages up to 1.25 monolayers. These islands cover the substrate with a single monolayer film up to depositionsof 0.80 monolayers, with 3D growth beyond this coverage. High voltages (V > 2.50 V) are needed to obtain STM images, showing the insulator character of the AlF3 islands. Important modifications are observed in the AlF3/Cu(100) surface after an annealing treatment.