Enhanced photoconductivity and fine response tuning in nanostructured porous silicon microcavities

R. URTEAGA; O. MARÍN; L.N. ACQUAROLI; D. COMEDI; J.A. SCHMIDT; R.R. KOROPECKI

JOURNAL OF PHYSICS: CONFERENCE SERIES

IOP Publishing

Año: 2009 vol. 167 p. 120051 - 120055

1742-6596

We used light confinement in optical microcavities to achieve a strong enhancement and a precise wavelength tunability of the electrical photoconductance of nanostructured porous silicon (PS). The devices consist of a periodic array of alternating PS layers, electrochemically etched to have high and low porosities - and therefore distinct dielectric functions. A central layer having a doubled thickness breaks up the symmetry of the onedimensional photonic structure, producing a resonance in the photonic band gap that is clearly observed in the reflectance spectrum. The devices were transferred to a glass coated with a transparent SnO2 electrode, while an Al contact was evaporated on its back side. The electrical conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of this photoconductance peak energy, and propose an explanation of the conductivity behaviour supported by calculations of the internal electromagnetic field. These devices are promising candidates for finely tuned photoresistors with potential application as chemical sensors and biosensors. conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of this photoconductance peak energy, and propose an explanation of the conductivity behaviour supported by calculations of the internal electromagnetic field. These devices are promising candidates for finely tuned photoresistors with potential application as chemical sensors and biosensors. conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of this photoconductance peak energy, and propose an explanation of the conductivity behaviour supported by calculations of the internal electromagnetic field. These devices are promising candidates for finely tuned photoresistors with potential application as chemical sensors and biosensors. conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of this photoconductance peak energy, and propose an explanation of the conductivity behaviour supported by calculations of the internal electromagnetic field. These devices are promising candidates for finely tuned photoresistors with potential application as chemical sensors and biosensors. 2 electrode, while an Al contact was evaporated on its back side. The electrical conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of this photoconductance peak energy, and propose an explanation of the conductivity behaviour supported by calculations of the internal electromagnetic field. These devices are promising candidates for finely tuned photoresistors with potential application as chemical sensors and biosensors.