CONICET | Buscador de Institutos y Recursos Humanos

Hydrogenated amorphous silicon samples were deposited on glass substrates at different temperatures by high 21 frequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogenfrequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogen 22 concentrations and structures were obtained. The transition from an amorphous to a crystalline material,concentrations and structures were obtained. The transition from an amorphous to a crystalline material, 23 induced by a four-step thermal annealing sequence, has been followed. Effusion of hydrogen fromthe films playsinduced by a four-step thermal annealing sequence, has been followed. Effusion of hydrogen fromthe films plays 24 an important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements ofan important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements of 25 hydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhancedhydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhanced 26 crystallizationwas obtained on samples deposited at lower substrate temperatures. A correlation between thesecrystallizationwas obtained on samples deposited at lower substrate temperatures. A correlation between these 27 measurements allowsto analyze the evolution of structuralproperties of the samples. The presence of voids in themeasurements allowsto analyze the evolution of structuralproperties of the samples. The presence of voids in the 28 material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystallinematerial, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline 29 silicon thin films.silicon thin films.