INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
Autor/es:
A.STURIALE; H.LI; J.K. RATH,; R.E.I. SCHROPP,; F.A.RUBINELLI
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: Melville, NY; Año: 2009 vol. 106 p. 14502 - 14512
ISSN:
0021-8979
Resumen:
The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon
micromorph tandem solar cell were investigated with numerical modeling techniques. The dark
current-voltage characteristics of the micromorph tandem structure at forward voltages show three
regions: two with an exponential dependence and a third where the current grows more slowly with
the applied voltage. In the first exponential region the current is entirely controlled by recombination
through gap states of the top cell. In the second exponential region the current is controlled by the
mixture of recombination through gap states of both the top and bottom cells and by free carrier
diffusion along the a-Si:H intrinsic layer. In the third region the onset of the electron space charge
limited current on the a-Si:H top cell can be observed along with some other mechanisms that are
discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
limited current on the a-Si:H top cell can be observed along with some other mechanisms that are
discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691
tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole
pairs generated under illumination in the top and bottom cells. The dark current at high forward
voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the
recombination junction. © 2009 American Institute of Physics. DOI: 10.1063/1.3151691