STUDY OF THE DRIFT MOBILITY IN a-Si:H SOLAR CELLS WITH NUMERICAL SIMULATIONS

H. RAMIREZ; M. DE GREEF; F.A. RUBINELLI

Anales AFA

Asociación Física Argentina

Lugar: Tandil; Año: 2012 vol. 23 p. 80 - 84

0327-358X

In this paper the drift mobilities in single m-i-m (where m stands for metal) injection structures of a-Si:H are systematically evaluated using numerical simulations. The resulting values are compared with the measured ones. The electrical parameters, in particular the scattering mobilities, resulting of previous fitting of experimental current-voltage (J-V) curves and spectral responses (SR) of a-Si:H based p-i-n structures are used as input data. The simulations were performed with the computer code D-AMPS to which several new options were incorporated in order to evaluate the drift mobility. These new options take into account either the trapping of electrons and holes at exponential band tail and deep states, or only at exponential band tail states. For both scenarios a new option was incorporated that allows the calculation of the trapped charge only at the energy levels of the band gap were trapping and re-emission processes of electrons and holes are compatible with the experimental times.