INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
Influence of microstructure and hydrogen concentration on amorphous silicon crystallization
Autor/es:
N. BUDINI ; P. A. RINALDI; J. A. SCHMIDT; R. D. ARCE; R. H. BUITRAGO
Revista:
THIN SOLID FILMS
Editorial:
ELSEVIER SCIENCE SA
Referencias:
Lugar: Amsterdam; Año: 2010 vol. 518 p. 5349 - 5354
ISSN:
0040-6090
Resumen:
Hydrogenated amorphous silicon samples were deposited on glass substrates at different temperatures by high
frequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogen
concentrations and structures were obtained. The transition from an amorphous to a crystalline material,
induced by a four-step thermal annealing sequence, has been followed. Effusion of hydrogen fromthe films plays
an important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements of
hydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhanced
crystallization was obtained on samples deposited at lower substrate temperatures. A correlation between these
measurements allowsto analyze the evolution of structural properties of the samples. The presence of voids in the
material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline
silicon thin films.films plays
an important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements of
hydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhanced
crystallization was obtained on samples deposited at lower substrate temperatures. A correlation between these
measurements allowsto analyze the evolution of structural properties of the samples. The presence of voids in the
material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline
silicon thin films.flectance showed that an enhanced
crystallization was obtained on samples deposited at lower substrate temperatures. A correlation between these
measurements allowsto analyze the evolution of structural properties of the samples. The presence of voids in the
material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline
silicon thin films.films.