INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
The semiconducting surface of In4Se3
Autor/es:
M. KLINKE; E. CAI; I. RODRIGUEZ; JIANDI ZHANG; R. MATZDORF; Y. LOSOVYI; J. LUI; P.A. DOWBEN; L. MAKINISTIAN; E.A. ALBANESI; A. PETUKHOV; YA. FIYALA; P. GALIY
Lugar:
New Orleans, USA
Reunión:
Congreso; APS March Meeting; 2008
Resumen:
The layered crystal In4Se3 is of growing interest because of its natural two dimensional structure and anomalies concerning transport properties. We have studied both the lattice and electronic band structures of cleaved (001) surface of In4Se3. Both LEED and STM reveal a p(1x1) surface structure with quasi-one dimensional atomic chains. ARPES data also confirm such quasi-one dimensional character with a very anisotropic band structure. The surface electronic density of states measured by tunneling spectroscopy is compared with theoretical calculations.