INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
INFRARED STUDY OF THE OXIDATION OF POROUS SILICON: EVIDENCE OF SURFACE MODES
Autor/es:
L. N. ACQUAROLI; A. BRONDINO; J.A. SCHMIDT; R.D. ARCE; R.R. KOROPECKI
Lugar:
Sa Coma, Mallorca, España
Reunión:
Conferencia; Porous Semiconductors Science and Technology; 2008
Institución organizadora:
PSST
Resumen:
The evolution of FTIR spectra of PS during oxidation is studied in the range 450 - 1300 cm-1. We show that the small scale of the PS structure leads to significant scattering cross sections for Fröhlich surface modes associated to stretching modes in siloxane bridges. The kinetics of the evolution of both bulk and surface related modes are studied using Principal Component analysis. As a result, two independent components are found, one of them related to TO modes associated to oxide covering large structures and the other associated to the oxidation of a distribution of prolate ellipsoids with nanoscopic scale.
