Resistive switching effect in HfO2 based memory devices

C. QUINTEROS; F. G. MARLASCA; R. ZAZPE; F. GOLMAR; P. STOLIAR; L. HUESO; P. LEVY

Buenos Aires

Encuentro; The 15th International Meeting on Chemical Sensors; 2014

COMISION NAC.DE ENERGIA ATOMICA

Metal/ insulator/ metal capacitor-like structures are prominent candidates for flash memory replacement technology, as the Resistive Switching mechanism appealing features (speed, downscaling, retention, endurance) evolve into a mature technology, coined Resistive Random Access Memory (ReRAM). In this work we report on the electrical characterization of HfO2-based structures, performed within different configurations and comparing before and after oxygen-ions? irradiation, for the implementation of non-volatile memory devices.