Building memristive and radiation hardness TiO2 based junctions

N. GHENZI; D. RUBI; E. MANGANO; G. GIMENEZ; M. BARELLA; F. GOLMAR; J. LELL; A. ZELCER; P. STOLIAR; P. LEVY

Buenos Aires

Encuentro; The 15th International Meeting on Chemical Sensors; 2014

COMISION NAC.DE ENERGIA ATOMICA

A variety of metal-oxide interfaces exhibit reversible and non-volatile changes between two stable electric resistance states after the application of pulsed electric stimulus (voltage or current). This electric pulse induced resistive switching (RS) effect is the most promising candidate for memory devices because it allows downscaling and exhibits high retentivity time, multilevel states and low power consumption [1]. Besides, this emerging technology, called resistive random-access memory (RRAM), exhibits fast switching speeds (< ns) and high endurance, characteristics that turn it into a good candidate to compete with existing flash memory devices. Here we report the study of micro-scale TiO2 junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. We present the fabrication and structural and electrical characterization of the junctions. We obtained a retentivity of 105 s, an endurance of 104 cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties