INVESTIGADORES
GOLMAR Federico
congresos y reuniones científicas
Título:
Light controlled resistive switching in amorphous Al2O3 films
Autor/es:
M. UNGUREANU; R. ZAZPE; F. GOLMAR; R. LLOPIS; F. CASANOVA; L. HUESO
Lugar:
Cambridge
Reunión:
Simposio; International Symposium on Integrated Functionalities (ISIF 2011); 2011
Resumen:
Resistive random access memory, based on the change in the electrical resistance of an insulator under suitable applied voltage pulses, is seen as a promising candidate for the next generation of non-volatile memory devices. We investigated the resistive switching characteristics of aluminum oxide for memory applications. Amorphous Al2O3 films with thicknesses between 10 and 50 nm were prepared by atomic layer deposition (ALD) on Si/SiO2 substrates. Pd or Pd/Ti top metal contacts were deposited by magnetron sputtering after photolithography patterning.
