Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions

R. GALCERAN; LL. BALCELLS; C. MARTINEZ-BOUBETA; B. BOZZO; J. CISNEROS-FERNANDEZ; M. DE LA MATA; C. MAGÉN; J. ARBIOL; J. TORNOS; F. A. CUELLAR; Z. SEFRIOUI; A. CEBOLLADA; F. GOLMAR; L. HUESO; F. CASANOVA; J. SANTAMARÍA; B. MARTINEZ

PHYSICAL REVIEW B

AMER PHYSICAL SOC

Lugar: New York; Año: 2015 vol. 92 p. 94428 - 94428

1098-0121

We report on magnetotransport properties on La0.7Sr0.3MnO3/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO3 substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the DELTA1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3%) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1%) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments.These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.