Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

M. VILLAFUERTE; S. P.HELUANI; G. JUÁREZ; D. COMEDI; G. BRAUNSTEIN; F. GOLMAR

MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

Año: 2007 vol. 977 p. 1 - 6

0272-9172

N-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. Xray diffraction analysis revealed that the films have the wurtzite structure and are highly oriented along the c-axis direction. Two Au and two Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a symmetric two-terminal structure in each case. The current-voltage characteristics of the two-terminal structures, and the temperature dependence of  the resistance switching effect, were studied in the 125-300 K temperature range. The results of  these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.