INVESTIGADORES
GOLMAR Federico
artículos
Título:
Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
Autor/es:
R. ZAZPE; P. STOLIAR; F. GOLMAR; R. LLOPIS; F. CASANOVA; L. HUESO
Revista:
APPLIED PHYSICS LETTERS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 2013 vol. 103 p. 1 - 5
ISSN:
0003-6951
Resumen:
We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact.
