INVESTIGADORES
GOLMAR Federico
artículos
Título:
Electronic transport in sub-micron square area organic field-effect transistors
Autor/es:
F. GOLMAR; P. STOLIAR; M. GOBBI; F. CASANOVA; L. HUESO
Revista:
APPLIED PHYSICS LETTERS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 2013 vol. 102 p. 1 - 5
ISSN:
0003-6951
Resumen:
Scaling down organic field effect transistors to channel areas well below the micron square could improve positively its speed and integration capabilities. Here, we report a careful study of the electronic carrier transport for such nanoscale devices. In particular, we explore the validity of standard analysis for parameters extraction in this size regime. We also study the effect of the large longitudinal electric field and fringe currents, especially their influence on the ON/OFF ratio.
