CONICET | Buscador de Institutos y Recursos Humanos

Resistive switching memory devices are systems in which the resistance of a material can be modulated between two non-volatile states by applying an electrical pulse. These devices are some of the most promising candidates for the next generation of non-volatile computer memories, although they are also being studied for many other advanced applications such as bio-inspired neuromorphic systems. Here we demonstrate a metal-insulator-semiconductor resistive switching memory in which the resistance can be controlled both by voltage pulses and by light. Our device stems from the traditional electrical-pulse manipulated resistive memories, adding the light as an extra control parameter. The system allows data encoding by using a certain light irradiance during the writing process and can be involved in the storage and transport of secured information. In addition, our design has the capability to work as light sensor, combination that opens the door to novel multifunctional storage devices.

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