GOYRET, JUAN P.; CASSANI, MARÍA V.; CARBONETTO, SEBASTIÁN H.; GARCIA?INZA, MARIANO A.

Low‐power temperature‐independent CMOS measurement circuits for resistive gas sensors

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS; Año: 2023

SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; REDIN, E.; FAIGÓN, A.

Numerical modeling of radiation-induced charge neutralization in MOS devices

RADIATION MEASUREMENTS; Año: 2022 vol. 153

GIMENEZ, MELISA LUCÍA; LIPOVETZKY, JOSÉ; ALCALDE BESSIA, FABRICIO; LONGHINO, JUAN MANUEL; TARTAGLIONE, AURELIANO; GARCIA-INZA, MARIANO ANDRÉS; BLOSTEIN, JUAN JERÓNIMO; CARBONETTO, SEBASTIÁN; GÓMEZ BERISSO, MARIANO; PÉREZ, MARTÍN; SIDELNIK, IVÁN; REDIN, EDUARDO GABRIEL; FAIGÓN, ADRIÁN

Neutron-gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer

MEDICAL PHYSICS; Año: 2022 vol. 49 p. 1276 - 1285

SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; REDIN, E.; FAIGON, A.

Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2022 vol. 69 p. 1229 - 1235

GARCÍA COZZI, R.; REDÍN, E.; GARCIA-INZA, M.; SAMBUCO SALOMONE, L.; FAIGÓN, A.; CARBONETTO, S.

Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current

MICROELECTRONICS RELIABILITY; Año: 2022 vol. 137

SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; FAIGON, A.

Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

Elektron; Lugar: Buenos Aires; Año: 2021 vol. 5 p. 100 - 104

CASSANI, M.; SAMBUCO SALOMONE, L.; CARBONETTO, S.; FAIGON, A.; REDIN, E.; GARCIA-INZA, M.

Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters,

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Lugar: Amsterdam; Año: 2021 vol. 182

CARBONETTO, S.; ECHARRI, M.; LIPOVETZKY, J.; GARCIA-INZA, M.; FAIGON, A.

Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 µm CMOS process

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2020 vol. 67 p. 1118 - 1124

GARCIA-INZA, M.; CASSANI, M.; CARBONETTO, S.; CASAL, M.; REDÍN, E.; FAIGÓN, A.

6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process

RADIATION MEASUREMENTS; Año: 2018 vol. 117 p. 63 - 69

GARCIA-INZA, M.; CARBONETTO, S.; SALAYA, G.; VAZQUEZ, I. MARTINEZ; FAIGON, A.

Integration of structures and circuits for dosimetry in a single CMOS chip

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS; Año: 2017 vol. 2016 p. 1 - 5

GARCIA INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; FAIGON, A.

Radiation Sensor Based on MOSFETs Mismatch Amplification for Radiotherapy Applications

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2016 vol. 63 p. 1784 - 1789

SAMBUCO SALOMONE, L.; LIPOVETZKY, J.; CARBONETTO, S.; GARCIA INZA, M.; REDIN, E. G.; CAMPABADAL, F.; FAIGON, A.

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

THIN SOLID FILMS; Lugar: Amsterdam; Año: 2016 vol. 600 p. 36 - 42

GARCIA INZA, M.; CARBONETTO, S.; LIPOVETZKY, J.; CARRÁ, M.J.; SAMBUCO SALOMONE, L.; REDIN, E. G.; FAIGON, A.

Switched Bias Differential MOSFET Dosimeter

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2014 vol. 61 p. 1407 - 1413

FAIGON, A.; GARCIA INZA, M.; LIPOVETZKY, J.; REDIN, E. G.; CARBONETTO, S.; SAMBUCO SALOMONE, L.; BERBEGLIA, F.

Experimental evidence and modeling of non-monotonic responses in MOS dosimeters

RADIATION PHYSICS AND CHEMISTRY (OXFORD); Lugar: Amsterdam; Año: 2014 vol. 95 p. 44 - 46

SAMBUCO SALOMONE, L.; KASULÍN, A.; LIPOVETZKY, J.; CARBONETTO, S. H.; GARCIA INZA, M.; REDÍN, E. G.; BERBEGLIA, F.; CAMPABADAL, F.; FAIGÓN, A.

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

JOURNAL OF APPLIED PHYSICS; Lugar: American Institute of Physics; Año: 2014 vol. 116

CARBONETTO, S.; GARCIA INZA, M.; LIPOVETZKY, J.; CARRÁ, M.J.; REDIN, E.; SAMBUCO SALOMONE, L.; FAIGÓN, A.

CMOS differential and amplified dosimeter with Field Oxide n-channel MOSFETs

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: Albuquerque; Año: 2014 vol. 61 p. 3466 - 3471

SAMBUCO SALOMONE, L.; LIPOVETZKY, J.; CARBONETTO, S.; GARCIA INZA, M.; REDIN, E. G.; CAMPABADAL, F.; FAIGON, A.

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

JOURNAL OF APPLIED PHYSICS; Lugar: New York; Año: 2013 vol. 113 p. 74501 - 74508

LIPOVETZKY, J.; GARCIA INZA, M.; CARBONETTO, S.; CARRÁ, M.J.; REDIN, E. G.; SAMBUCO SALOMONE, L.; FAIGON, A.

Field Oxide n-­channel MOS Dosimeters Fabricated in CMOS Processes

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2013 vol. 60 p. 4683 - 4691

LIPOVETZKY, J.; HOLMES-SIEDEL, A.; GARCIA INZA, M.; CARBONETTO, S.; REDIN, E. G.; FAIGON, A.

New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2012 vol. 59 p. 3133 - 3140

GARCIA INZA, M.; LIPOVETZKY, J.; REDIN, E. G.; CARBONETTO, S.; FAIGON, A.

Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2011 vol. 58 p. 808 - 812

CARBONETTO, S.; GARCIA INZA, M.; LIPOVETZKY, J.; REDIN, E. G.; SAMBUCO SALOMONE, L.; FAIGON, A.

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Lugar: New York; Año: 2011 vol. 58 p. 3348 - 3353

LIPOVETZKY, J.; REDÍN, E. G.; GARCÍA INZA, M. A.; CARBONETTO, S. H.; FAIGÓN, A.

Reducing Measurement Uncertainties Using Bias Cycled Measurement in MOS Dosimetry at Different Temperatures

IEEE TRANSACTIONS ON NUCLEAR SCIENCE; Año: 2010 vol. 57 p. 848 - 853