GHENZI, N.; BARELLA, M.; RUBI, D.; ACHA, C.

Adaptive threshold in TiO2-based synapses

JOURNAL OF PHYSICS - D (APPLIED PHYSICS); Año: 2019 vol. 52

LINARES MOREAU, M.; BARELLA, M.; LOPEZ MIR, L.; GHENZI, N.; GOLMAR, F.; GRANJA, L.P.; OCAL, C.; LEVY, P.

Bipolar resistive switching on TiO2/Au by conducting Atomic Force Microscopy

Materials Today: Proceedings; Año: 2019 vol. 14 p. 100 - 103

NESTOR GHENZI; PABLO LEVY

Impact of sub- and supra- threshold switching in the synaptic behavior of TiO 2 memristors

MICROELECTRONIC ENGINEERING; Lugar: Amsterdam; Año: 2018 vol. 193 p. 13 - 17

GHENZI, N.; ROZENBERG, M.; PIETROBON, L.; LLOPIS, R.; GAY, R.; BELTRÁN, M.; KNEZ, M.; HUESO, L.; STOLIAR, P.

One-transistor one-resistor (1T1R) cell for large-area electronics

APPLIED PHYSICS LETTERS; Año: 2018 vol. 113

NESTOR GHENZI

Caracterización eléctrica y modelado de memorias no volátiles basadas en óxidos

sam asociación argentina de materiales; Año: 2017 vol. 1 p. 33 - 42

JULIO BLASCO; GHENZI N. F.; JORDI SUÑE; PABLO LEVY; ENRIQUE MIRANDA

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films

MICROELECTRONICS RELIABILITY; Año: 2015 vol. 55 p. 1 - 14

DIEGO RUBI; ARIEL KALSTEIN; WILSON ACEVEDO; GHENZI N. F.; CINTHIA QUINTEROS; ELIANA MANGANO; PABLO GRANNEL; FEDERICO GOLMAR; SERGIO SUAREZ; GUILLERMO BERNARDI; CECILIA ALBORNOZ; GABRIELA LEYVA; PABLO LEVY

Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness

THIN SOLID FILMS; Año: 2015 vol. 583 p. 76 - 80

GHENZI N. F.; MARCELO J. ROZENBERG; ROGER LLOPIS; LUIS HUESO; PABLO STOLIAR

Tuning the resistive switching properties of TiO2− x films

APPLIED PHYSICS LETTERS; Lugar: American Institute of Physics; Año: 2015 vol. 106 p. 123509 - 123512

JULIAN BLASCO; GHENZI N. F.; JORDI SUÑE; PABLO LEVY; ENRIQUE MIRANDA

Modeling of the hysteretic I-V characteristics of TiO2-based resistive switches using the generalized diode equation.

IEEE ELECTRON DEVICE LETTERS; Año: 2014 vol. 35 p. 390 - 392

PABLO STOLIAR; PABLO LEVY; MARIA JOSÉ SÁNCHEZ; GABRIELA LEYVA; CECILIA ALBORNOZ; FERNANDO GOMEZ MARLASCA; ZANINI ALBERTO; CYNTHIA TORO; NÉSTOR GHENZI; MARCELO J. ROZENBERG

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS; Año: 2014 vol. 61 p. 21 - 26

NÉSTOR GHENZI; DIEGO RUBI; ELIANA MANGANO; GUSTAVO GIMENEZ; JULIAN LELL; ANDRES ZELCER; PABLO STOLIAR; PABLO LEVY

Building memristive and radiation hardness TiO2-based junctions

THIN SOLID FILMS; Año: 2014 vol. 550 p. 683 - 688

GHENZI N. F.; MARIA J SANCHEZ; DIEGO RUBI; MARCELO ROZENBERG; CORINA URDANIZ; MARIANA WEISSMAN; PABLO LEVY

Tailoring conductive filaments by electroforming polarity in memristive based TiO2 junctions

APPLIED PHYSICS LETTERS; Lugar: American Institute of Physics; Año: 2014 vol. 104 p. 183505 - 183509

GHENZI N. F.; MARIA JOSÉ SÁNCHEZ; PABLO LEVY

A compact model for binary oxides-based memristive interfaces

JOURNAL OF PHYSICS - D (APPLIED PHYSICS); Año: 2013 vol. 46 p. 415101 - 415101

DIEGO RUBI; FEDERICO TESLER; IGNACIO ALPOSTA; ARIEL KALSTEIN; GHENZI N. F.; FERNANDO GOMEZ MARLASCA; MARCELO J. ROZENBERG; PABLO LEVY

Two resistive switching regimes in thin film manganite memory devices on silicon

APPLIED PHYSICS LETTERS; Año: 2013 vol. 103 p. 163506 - 163506

IGNACIO ALPOSTA; ARIEL KALSTEIN; GHENZI N. F.; S. BENGIO; G. ZAMPIERI; DIEGO RUBI; PABLO LEVY

Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin films.

IEEE TRANSACTIONS ON MAGNETICS; Año: 2013 vol. 49 p. 4582 - 4585

FERNANDO GOMEZ MARLASCA; GHENZI N. F.; GABRIELA LEYVA; CECILIA ALBORNOZ; PABLO STOLIAR; DIEGO RUBI; PABLO LEVY

Electron transport mechanisms in metal-manganite memristive interfaces

JOURNAL OF APPLIED PHYSICS; Año: 2013 vol. 113 p. 114510 - 114510

GHENZI N. F.; FERNANDO GOMEZ MARLASCA; PABLO STOLIAR; PABLO LEVY

Resistive switching in Ag-TiO2 contacts

PHYSICA B - CONDENSED MATTER; Año: 2012 vol. 407 p. 3096 - 3098

GHENZI N. F.; MARIA JOSÉ SÁNCHEZ; MARCELO J. ROZENBERG; PABLO STOLIAR; FERNANDO GOMEZ MARLASCA; DIEGO RUBI; PABLO LEVY

Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

JOURNAL OF APPLIED PHYSICS; Año: 2012 vol. 111 p. 84512 - 84512

FERNANDO GOMEZ MARLASCA; NÉSTOR GHENZI; PABLO STOLIAR; MARIA JOSÉ SÁNCHEZ; MARCELO J. ROZENBERG; GABRIELA LEYVA ; PABLO LEVY

Asymmetric pulsing for reliable operation of titanium/manganite memristors

APPLIED PHYSICS LETTERS; Año: 2011 vol. 98 p. 123502 - 123505

FERNANDO GOMEZ MARLASCA; GHENZI N. F.; MARCELO J. ROZENBERG; PABLO LEVY

Understanding electroforming in bipolar resistive switching oxides

APPLIED PHYSICS LETTERS; Año: 2011 vol. 98 p. 42901 - 42905

NÉSTOR GHENZI; MARIA JOSÉ SÁNCHEZ; FERNANDO GOMEZ MARLASCA; PABLO LEVY; MARCELO J. ROZENBERG

Hysteresis Switching Loops in Ag-Manganite Memristive Interfaces

JOURNAL OF APPLIED PHYSICS; Año: 2010 vol. 1 p. 93719 - 93724