INVESTIGADORES
GARCIA INZA Mariano Andres
congresos y reuniones científicas
Título:
Injection Mesurements and Simulation for a Floating Gate MOSFET Designed for Radiation Measurements
Autor/es:
CARBONETTO, S.; JUAN CRUZ SUAREZ; MARIANO ANDRÉS GARCÍA INZA; A. FAIGÓN
Lugar:
Mar del Plata
Reunión:
Conferencia; Conferencia Argentina de Electrónica; 2019
Institución organizadora:
Univ. Nac. de Mar del Plata
Resumen:
In this paper, a Floating Gate transistor designed and fabricated to be used as a radiation sensor is presented, and the charge injection process through an injection electrode is studied. The device was successfully charged, and the injection process was simulated in a SPICE software, considering that the injection mechanism was Fowler-Nordheim tuneling. The parameters for the Fowler-Nordheim current were found and simulations successfully reproduced the measurements. These simulations will allow to improve the desing and the charge injection setup.
