Design of a simple readout circuit for resistive switching memristors based on CMOS inverters

SANCA, G.; DI FRANCESCO, F.; CAROLI, N; GARCÍA INZA, M.A.; GOLMAR, F.

Palermo

Congreso; International Forum on Research and Technology for Society and Industry (RTSI); 2018

In this paper a CMOS reading circuit for memristor-based RRAM (Resistive Random Access Memory) cell is described. Simulations for one cell, 4 by 4 nMOS-accessed-array and extension to N by N nMOS-accessed-array are presented. The proposed circuit is based on CMOS inverters, which result in a simple low area architecture and in a non-destructive operation. Resistive switching memristor is used as reading reference. Simulations were performed in 0.5 μm and 180 nm CMOS technology and using memristor model available in bibliography.