Oxide-electronics building block for neuromorphic computing

NESTOR GHENZI; PABLO STOLIAR; LUIS HUESO; DEGO RUBI; PABLO LEVY

Congreso; reunion nano cnea 2016; 2016

Resistive switching RS is a reversible and non volatile change of the resistance, obtained upon applying electrical pulses to certain oxide - metal interfaces.Resistive switching has been found in a wide variety of oxides: from simple oxides like NiO, TiO 2 to more complex oxides like Cuprates andManganites. Demonstrated downsizing possibilities, lowpower consumption and high speed switching, qualify RS devices as possible candidates for RRAM Non Volatile Memory NVM devices. The mechanism responsible of the EPIR is not completely understood although there are indications of the importance of the defects in the materials. The formation of conduction channels is difficult to control  without the TFT.