resistive switching in oxides

GHENZI N. F.; PABLO LEVY

Conferencia; Frontiers in Electronic Materials:; 2013

This chapter examines the nanoscale current distribution in single crystalline Fe:doped SrTiO3 (STO) thin films devices and linked it to chemical and microstructural changes in detail. It also examines in-operando hard X-ray photoelectron spectroscopy (HAXPES) studies of the resistive switching (RS) phenomenon observed in Ti/HfO2-based systems. The chapter presents the distribution of oxygen vacancies in a switched memristor fabricated from epitaxial Fe-doped STO by spatially resolved x-ray absorption near-edge structure (XANES). It focuses on the interfacial microstructure and the magnetic, transport and nanoscale switching phenomena of La1-xSrxMnO3 (LSMO) films grown by chemical solution deposition (CSD) on SrTiO3 (STO) and LaAlO3 (LAO) single crystalline substrates. The chapter explores different resistance states of metal (Ag, Ti) - manganite(La0.325Pr0.300Ca0.375MnO3) interfaces as prototypes for non-volatile memristive memory devices. RS materials are among the most promising candidates for next-generation nonvolatile memory technology