Characterization of single crystalline ZnSe and ZnTe grown by vapor phase transport

A.B. TRIGUBÓ; M.H. AGUIRRE; M.C. DI STEFANO; A.M. MARTÍNEZ; R. D´ELÍA; H. CÁNEPA; E. HEREDIA

Puerto Iguazú, Misiones, Argentina

Simposio; SLAFES XIX, XIX Latin American Symposium on Solid State Physics; 2008

Simposio Latinoamericano de Física del Estado Sólido (SLAFES)

<!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-parent:""; margin:0cm; margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:12.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";} @page Section1 {size:612.0pt 792.0pt; margin:70.85pt 3.0cm 70.85pt 3.0cm; mso-header-margin:36.0pt; mso-footer-margin:36.0pt; mso-paper-source:0;} div.Section1 {page:Section1;} --> Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSeingots using respectively physical and chemical transport methods. Different temperatureprofiles and growth rates were analyzed in order to optimize the necessary crystalline qualityfor device development.Optical and scanning electron micrographs of the corrosion figures produced by chemicaletching were used to obtain the dislocation density and the misorientation between adjacentsubgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material wasdetermined by transmission electronic microscopy. Optical transmittance was measured byinfrared transmission spectrometry and the resulting values were compared to commercialsamples.