INVESTIGADORES
GARCIA INZA Mariano Andres
congresos y reuniones científicas
Título:
Floating Gate PMOS Dosimeters under Bias Controlled Cycled Measurement
Autor/es:
M. GARCIA INZA; J. LIPOVETZKY; E. REDÍN; S. CARBONETTO; A. FAIGÓN
Lugar:
Langenfeld
Reunión:
Conferencia; Radiation Effects on Components and Systems (RADECS) 2010; 2010
Institución organizadora:
Austrian Institute of Technology
Resumen:
Floating Gate Metal Oxide Semiconductor (FG-MOS) structures, designed and fabricated in a CMOS process, were irradiated under the Bias Controlled Cycled Measurement (BCCM) novel technique conditions. Results presented in this work show the possibility of using such structures with the BCCM technique to measure ionizing radiation absorbed dose over a range of several kGy without significant lost of sensitivity.
