INVESTIGADORES
GARCIA INZA Mariano Andres
congresos y reuniones científicas
Título:
Ionizing Radiation Differential Sensor Based on Thick Gate Oxide MOS Transistors
Autor/es:
M. CARRÁ; M. GARCIA INZA; J. LIPOVETZKY; S. CARBONETTO; E. REDÍN; L. SAMBUCO SALOMONE; A. FAIGÓN
Lugar:
Buenos Aires
Reunión:
Conferencia; Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) 2013; 2013
Institución organizadora:
UTN-FRBA
Resumen:
This work presents a differential MOS circuit for ionizing radiation dose estimation. Thick gate oxide n-MOS transistors are used as the sensing pair, with p-MOS load to enhance the radiation response. The circuit is analyzed and tested under gamma (60 Co) radiation. Results show a radiation sensitivity increase up to 8 Gy and an improved thermal drift rejection ratio in comparison with a single n-MOS dosimeter.
