Novel CMOS differential and amplified dosimeters. Proposals and simulations.

S. CARBONETTO; M. GARCIA INZA; J. LIPOVETZKY; M. CARRÁ; L. SAMBUCO SALOMONE; E. REDÍN; A. FAIGÓN

Biarritz

Conferencia; Radiation Effects on Components and Systems (RADECS) 2012; 2012

IMS

We propose the use of CMOS differential circuits to enhance the performance of floating gate MOSFETs as ionizing radiation dosimeters. Three circuit topologies are presented and discussed with the aim of increasing their radiation sensitivity and improving their temperature stability. Simulations were performed using SPICE models for floating gate and standard transistors of a 1.5 µm CMOS process. The simulation results show that on chip amplification is possible along with temperature sensitivity attenuation.