Characterization of single crystalline ZnTe and ZnSe grown by vapor phase transport.

ALICIA B. TRIGUBÓ; M. H. AGUIRRE; M.C. DI STEFANO; ANA MARÍA MARTÍNEZ; R. D´ELÍA; H.R. CÁNEPA; E. HEREDIA

Journal of Physics: Conference Series

IOP Publishing

Lugar: Bristol; Año: 2009 p. 1 - 5

1742-6588

Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSeingots using respectively physical and chemical transport methods. Different temperatureprofiles and growth rates were analyzed in order to optimize the necessary crystalline qualityfor device development.Optical and scanning electron micrographs of the corrosion figures produced by chemicaletching were used to obtain the dislocation density and the misorientation between adjacentsubgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material wasdetermined by transmission electronic microscopy. Optical transmittance was measured byinfrared transmission spectrometry and the resulting values were compared to commercialsamples.