Modeling of the hysteretic I-V characteristics of TiO2-based resistive switches using the generalized diode equation.

JULIAN BLASCO; GHENZI N. F.; JORDI SUÑE; PABLO LEVY; ENRIQUE MIRANDA

IEEE ELECTRON DEVICE LETTERS

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Año: 2014 vol. 35 p. 390 - 392

0741-3106

conduction characteristics of TiO2-based resistive switches based 3 on the generalized diode equation is reported. The proposed 4 model consists of two antiparallel diodes with series and parallel 5 resistances representing the filamentary current pathway span6 ning the oxide layer and the possible parasitic conduction effects. 7 The model accounts for the pulse-induced hysteretic behavior 8 exhibited by the I?V characteristic after electroforming. Three 9 different approaches, each one of them with increased complexity, 10 are assessed: 1) constant; 2) nanowire-like; and 3) sigmoidal diode 11 amplitude. In all cases, the logarithmic conductance of the diodes is modeled using a logistic-type threshold function.