Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

PABLO STOLIAR; PABLO LEVY; MARIA JOSÉ SÁNCHEZ; GABRIELA LEYVA; CECILIA ALBORNOZ; FERNANDO GOMEZ MARLASCA; ZANINI ALBERTO; CYNTHIA TORO; NÉSTOR GHENZI; MARCELO J. ROZENBERG

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Año: 2014 vol. 61 p. 21 - 26

1549-7747

We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile