Building memristive and radiation hardness TiO2-based junctions

NÉSTOR GHENZI; DIEGO RUBI; ELIANA MANGANO; GUSTAVO GIMENEZ; JULIAN LELL; ANDRES ZELCER; PABLO STOLIAR; PABLO LEVY

THIN SOLID FILMS

ELSEVIER SCIENCE SA

Año: 2014 vol. 550 p. 683 - 688

0040-6090

We studymicro-scale TiO2 junctions that are suitable to be used as resistive random-access memory nonvolatile deviceswith radiation hardnessmemristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 105 s, an endurance of 104 cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties.