Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin films.

IGNACIO ALPOSTA; ARIEL KALSTEIN; GHENZI N. F.; S. BENGIO; G. ZAMPIERI; DIEGO RUBI; PABLO LEVY

IEEE TRANSACTIONS ON MAGNETICS

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Año: 2013 vol. 49 p. 4582 - 4585

0018-9464

Ferromagnetic thin films of La2/3Ca1/3MnO3 manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates. We performed structural, magnetic, spectroscopic and electrical characterization of the films. Resistive Switching between high and low resistance states was obtained upon pulsing with opposite polarities voltages. The I-V curves exhibit sharp transitions between these states. The RS properties are strongly dependant on the films oxygen stochiometry and on the compliance current used for producing the high to low transition. ON/OFF ratios as high as 1000 were obtained for optimal RS conditions. Obtained results are discussed within the framework of mobile oxygen vacancies.