INVESTIGADORES
GHENZI Nestor
artículos
Título:
Electron transport mechanisms in metal-manganite memristive interfaces
Autor/es:
FERNANDO GOMEZ MARLASCA; GHENZI N. F.; GABRIELA LEYVA; CECILIA ALBORNOZ; PABLO STOLIAR; DIEGO RUBI; PABLO LEVY
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Año: 2013 vol. 113 p. 114510 - 114510
ISSN:
0021-8979
Resumen:
We studied La0.325Pr0.300Ca0.375MnO3-Ag memristive interfaces. We present a pulsing/measuring
protocol capable of registering both quasi-static i-v data and non-volatile remnant resistance. This
protocol allowed distinguishing two different electronic transport mechanisms coexisting at the
memristive interface, namely space charge limited current and thermionic emission limited current.
We introduce a 2-element electric model that accounts for the obtained results and allows
predicting the quasi-static i-v relation of the interface by means of a simple function of both
the applied voltage and the remnant resistance value. Each element of the electric model is
associated to one of the electronic transport mechanisms found. This electric model could
result useful for developing time-domain simulation models of metal-manganite memristive
interfaces.