Hysteresis Switching Loops in Ag-Manganite Memristive Interfaces

NÉSTOR GHENZI; MARIA JOSÉ SÁNCHEZ; FERNANDO GOMEZ MARLASCA; PABLO LEVY; MARCELO J. ROZENBERG

JOURNAL OF APPLIED PHYSICS

AMER INST PHYSICS

Año: 2010 vol. 1 p. 93719 - 93724

0021-8979

Multilevel resistance states in silver-manganite interfaces are studied both experimentally andthrough a realistic model that includes as a main ingredient the oxygen vacancies diffusion underapplied electric fields. The switching threshold and amplitude studied through hysteresis switchingloops are found to depend critically on the initial state. The associated vacancy profiles furtherunveil the prominent role of the effective electric field acting at the interfaces. While experimentalresults validate main assumptions of the model, the simulations allow to disentangle the microscopicmechanisms behind the resistive switching in metal-transition metal oxide interfaces.