Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

J. LIPOVETZKY; M. GARCIA INZA; S. CARBONETTO; M. CARRÁ; E. REDÍN; L. SAMBUCO SALOMONE; A. FAIGÓN

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2013

0018-9499

This paper presents a new technique to build MOS dosimeters using standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The devices were fabricated in two different commercial CMOS processes with channel lengths of 0.6 um, gate oxide thicknesses of 600 nm and 400 nm. Responsivities up to 4.4 mV/rad with positive bias, and 1.7 mV/rad with zero gate bias were obtained in the thicker oxides. The effect of charge trapped in the oxide and interface states on the shift in the threshold voltage are analysed.